PTFA211001E Datasheet, PDF (6/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz

PTFA211001E
Reference Circuit
C0.1001µF
1R.23KV
1R.12KV
QLMQ17805
Q1
VDD
BCP56
C0.2001µF _C0.3001µF
R2K3_V
R4
2KV
1R05V
R6
5.1KV
R8
2KV
C4
10 µF
35V
C5 R7
0.1µF 5.1KV
C6
1µF
0C.701µF
1C08pF
l6
C11
C12 C13
C14
10pF 1µF 0.02µF 10µF
50V
VDD
R9
10V
l8
RF_IN
1C01p0F
l5
DUT
C19
1.2pF
1C02p1F
l1
l2
l3 l4 l7
l10 l11 l12 l13 l14
l15 RF_OUT
0C.94pF
C20
l9
1.2pF
Reference circit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PTFA211001E
PCB
0.76 mm [.030”] thick, ε_r = 4.5
C15
10pF
C16
1µF
C17
0.02µF
C18
10µF
50V
A 2 1 1 0 0 1 e f _ sc h
LDMOS Transistor
Rogers TMM4
2 oz. copper
Microstrip
Electrical Characteristics at 2140 MHz¹
l1
0.130 λ, 52.0 Ω
l2
0.235 λ, 52.0 Ω
l3
0.191 λ, 39.0 Ω
l4
0.018 λ, 11.5 Ω
l5
0.024 λ, 64.0 Ω
l6
0.261 λ, 64.0 Ω
l7
0.073 λ, 7.0 Ω
l8, l9
0.170 λ, 55.0 Ω
l10
0.043 λ, 5.0 Ω
l11 (taper)
0.059 λ, 5.0 Ω / 17.4 Ω
l12 (taper)
0.033 λ, 17.4 Ω / 42.0 Ω
l13
0.124 λ, 42.0 Ω
l14
0.381 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
9.96 x 1.30
18.01 x 1.30
14.30 x 2.08
1.22 x 10.03
1.88 x 0.89
20.32 x 0.89
4.98 x 17.68
13.08 x 1.17
2.95 x 25.40
4.01 x 25.40 / 6.17
2.36 x 6.17 / 1.83
9.30 x 1.83
29.11 x 1.37
Dimensions: L x W (in.)
0.392 x 0.051
0.709 x 0.051
0.563 x 0.082
0.048 x 0.395
0.074 x 0.035
0.800 x 0.035
0.196 x 0.696
0.515 x 0.046
0.116 x 1.000
0.158 x 1.000 / 0.243
0.093 x 0.243 / 0.072
0.366 x 0.072
1.146 x 0.054
Data Sheet
6 of 9
Rev. 03, 2008-03-04