PTFB201402FC Datasheet, PDF (6/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFB201402_INPUT
Reference Circuit
PTFB201402FC
C108
100000 pF
S2
8
In
1
Out
NC
NC
4
2 36
75
R107
100 Ohm
C109
100000 pF
C107
100000 pF
R105
1300 Ohm
R104
1200 Ohm
C101
1000000 pF
S1
2C
1
4
B
S
3E
R106
100 Ohm
S3
R108
10 Ohm
TL137
3
R111
1000 Ohm TL108 TL160
1
2
3
C102
10000000 pF
TL161
TL107
TL109 TL163
1
2
3
C103
15 pF
TL162
TL110
TL111
TL102 TL103 TL104
R101
10 Ohm
Pi
TL147 TL148
TL101
TL105
Drai
RF_IN
C106
TL149
TL151
U1
TL106
TL115
15 pF
TL116 TL114
TL112 TL113
3
2
1
TL117
Pin G1
Gate DUT
TL150
1 _-90
3
00
2 -90
4
TL135
TL130
C105
15 pF
TL131
TL124 TL129 TL123 TL132
R103
TL152
Pin G2
2
1
3
Gate DUT
50 Ohm
TL164
1
3
2
TL125
TL133
TL126
TL127
TL134
R102
10 Ohm
TL119
TL121
TL120
TL118
TL122
TL128
Pi
Drai
TL145
TL139
1
3
2
TL140
1
3
2
R109
10 Ohm
TL141
S4
TL146
Er=3.48
H=20 mil
RO/RO4350B1
3
TL142
TL144 TL138
3
2
1
TL143
R110
1000 Ohm TL156
TL153
1
2
3
C110
10000000 pF
TL158
TL155
TL157 TL154
1
2
3
C104
15 pF
TL159 TL136
b201402ef_bdin_02-03-2011
Reference circuit input schematic for ƒ = 2170 MHz
Data Sheet
6 of 14
Rev. 03.1, 2016-06-14