PTFB201402FC Datasheet, PDF (2/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFB201402FC
DC Characteristics (single side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 A
V_DS = 28 V, I_DQ = 650 mA
V_GS = 10 V, V_DS = 0 V
Symbol Min Typ
V_(BR)DSS
65
—
I_DSS
—
—
I_DSS
—
—
R_DS(on)
—
0.3
V_GS
2.3
2.8
I_GSS
—
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 120 W CW)
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_qJC
65
–6 to +10
200
–40 to +150
0.39
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
Order Code
PTFB201402FC V1 R0 PTFB201402FCV1R0XTMA1
PTFB201402FC V1 R250 PTFB201402FCV1R250XTMA1
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 03.1, 2016-06-14