PTFB201402FC Datasheet, PDF (1/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFB201402FC
High Power RF LDMOS Field Effect Transistor
140 W, 28 V, 2010 – 2025 MHz
Description
The PTFB201402FC integrates two 70 W LDMOS FETs into one
open-cavity ceramic package. It is designed primarily for Doherty cel-
lular amplifier applications in the 2010 to 2025 MHz frequency band.
Manufactured with Infineon’s advanced LDMOS process, this device
offers excellent thermal performance and superior reliability.
PTFB201402FC
Package H-37248-4
Small Signal CW
Gain & Input Return Loss, single side
V_DD = 28 V, I_DQ = 650 mA
21.0
20.5
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
1800
Gain
IRL
1900
2000
2100
Frequency (MHz)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
2200
Features
• Broadband internal matching
• Typical CW performance, 28 V, single side
- Output power, P_1dB = 70 W
- Efficiency = 56%
• Integrated ESD protection
• Excellent thermal stability
• Capable of handling 10:1 VSWR @ 28 V, 70 W
(CW) output power, per side
• Pb-free and RoHS-compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
V_DD = 28 V, I_DQ (main) = 500 mA, V_GSPK = 42.6% x V_GS1, ƒ₁ = 1880 MHz, ƒ₂ = 2025 MHz, P_OUT = 20 W, PAR = 10 dB @
0.01% CCDF probability
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
15
16
—
dB
hD
34
36
—
%
Adjacent Channel Power Ratio
ACPR
—
–38.5
–33
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 03.1, 2016-06-14