PTFB201402FC Datasheet, PDF (3/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFB201402FC
Typical Performance (data taken in a production test fixture)
Six-carrier TD-SCDMA Drive-up,
single side
V_DD = 28 V, I_DQ = 650 mA, ƒ = 2018 MHz
CW Performance, single side
V_DD = 28 V, I_DQ = 650 mA
-20
Adj Lower
50
-25
Adj Upper
Alt Lower
45
-30
Alt Upper
40
Efficiency
-35
35
-40
30
-45
25
-50
20
-55
15
-60
10
34 35 36 37 38 39 40 41 42 43 44 45
Output Power (dBm)
19.6
60
Gain
19.2
50
18.8
40
18.4
30
Efficiency
2010 MHz
2025 MHz
18.0
20
38 39 40 41 42 43 44 45 46 47 48 49
Output Power (dBm)
CW Performance, single side
V_DD = 28 V, I_DQ = 650 mA, ƒ = 2018 MHz
21
60
20 _Gain
50
19
40
18
Efficiency
25° C
30
-25 ° C
90° C
17
20
38 39 40 41 42 43 44 45 46 47 48 49
Output Power (dBm)
Two-tone Performance at Various I_DQ
single side, V_DD = 28 V, ƒ = 2018 MHz
-10
550 mA
-20
600 mA
650 mA
700 mA
-30
750 mA
-40
-50
-60
33 35 37 39 41 43 45 47
Average Output Power (dBm)
Data Sheet
3 of 14
Rev. 03.1, 2016-06-14