PTFB201402FC Datasheet, PDF (4/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

Typical Performance (cont.)
CW Gain & Eff. vs. Output Power
at various V_DD, single side
I_DQ = 650 mA, ƒ = 2018 MHz
20.0
60
19.5
50
19.0
40
18.5
30
18.0
20
17.5
V_DD = 32 V
V_DD = 28 V
10
V_DD = 24 V
17.0
0
38 39 40 41 42 43 44 45 46 47 48 49 50
Output Power (dBm)
PTFB201402FC
CW Sweep at P_1dB, single side
V_DD = 28 V, I_DQ = 650 mA
21.0
60
20.5
20.0
Gain
19.5
55
Efficiency
50
45
19.0
40
18.5
35
18.0
2010 MHz
30
2018 MHz
17.5
2025 MHz
25
17.0
20
38 39 40 41 42 43 44 45 46 47 48 49
Output Power (dBm)
Two-tone Performance at
Selected Frequencies
single side, V_DD = 28 V,
I_DQ = 650 mA, 1 MHz tone spacing
50
2010 MHz
40
2018 MHz
2025 MHz
30
20
10
0
-15
Efficiency
-25
IMD3
-35
IMD5 ^-45
-55
-10
33
35 37 39 41 43 45
Output Power, avg. (dBm)
-65
47
Data Sheet
4 of 14
Rev. 03.1, 2016-06-14