PTFB201402FC Datasheet, PDF (5/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

db201602ef Dec. 3, 2009 4:50:38 PM
ptfb201602ef
Nornalized to 50 Ohms
Broadband Circuit Impedance
Z Source
D
Z Load
PTFB201402FC
Z₀ = 50 Ω
G
S
Z Source
2025 MHz
2010 MHz
Frequency
MHz
2010
2025
Z Source W
R
jX
15.4
3.8
15.5
4.1
Z Load W
R
jX
3.9
–4.4
3.9
–4.4
See next page for reference circuit information
Z Load
2025 MHz
0.1
2010 MHz
0. ²
0.3
0.4
Data Sheet
5 of 14
Rev. 03.1, 2016-06-14