PTFB201402FC Datasheet, PDF (13/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFB201402FC
Package Outline Specifications
Package H-37248-4
2X 4.83±0.51
[.190±0.020]
2X 45° X 2.72
[45° X .107]
(8.89
[.350])
CL
(5.08
[.200])
D1
D2
4X R0.76+-00.3.183
[
R.030
+0.005
-0.015
]
FLANGE 9.78
[.385]
LID 9.40
[.370]
CL
19.43±0.51
[.765±0.020]
G1
G2
SPH 1.57
[.062]
2X 12.70
[.500]
19.81±0.20
[.780±0.008]
4X 3.81
[.150]
1.02
[.040]
0.0381 [.0015] -A-
H-37248-4_po_02_01-09-2013

3.76±0.25
[.148±0.010]
CL
S
20.57
[.810]
Diagram Notes—unless otherwise specified:
Diagra₁m_. N_Io_nt_te_es_rp—_reu_tn_dle_imss_eno_sth_ioe_nrw_s i_as_ne_dsp_toe_leci_rf_aie_nd_c:_{es per ASME Y14.5M-1994.}
2¹.^. P^Inr^tim^era^pr^ry^etd^dim^ime^enⁿs^sio^ionⁿs^sa^are^ndm^tm^ol.^eA^raltⁿe^cr^en^sat^pe^ed^rim^ASe^Mns^Eio^Yn¹s⁴a^.5re^Mi^-n¹c⁹h⁹e⁴s^..
3².^. A^Pl^rlⁱt^mol^ae^rr^yan^dc^imes^en±^s0^io.ⁿ1^s27^ar[^e.0^m05^m] ^.u^Anl^le^tes^rs^nas^tp^ee^dciⁱf^mie^edⁿo^st^iohⁿe^srw^ais^ree.^inches.
4³.^. P^Ai^ln^l s^to: ^lD^e1^ra,ⁿD^c2^es–^±dr⁰a^.i¹n²s⁷; G^[.01⁰, ⁵G^]2^u–^nleg^sa^ste^ss^p; ^eS^c–^{ifi e} s^do^ou^tr^hc^ee^r.^wise.
5⁴.^. L^Peⁱⁿa^sd^: t^Dhi¹c^,k^Dne²s⁼s:^d0^r.^a1ⁱⁿ0^s+^{; S}0.⁼07^s6^o/^u–^r0^c.^e0^;2^G5 ¹m^, m^G2[0⁼.0^g0^a4^t+^e0^s..003/–0.001 inch].
6⁵.^. G^Leo^ald^dp^tl^haⁱt^ci^knⁿg^et^sh^sic^:k⁰n^.1e⁰ss²:⁺1⁰.1^.04⁷±^6/0^–.⁰3^.8⁰²m⁵ic^[0ro^.0n⁰[⁴4⁺5⁰±^.01⁰5^3/m^–0ic^.r⁰o⁰in¹c^].h].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
13 of 14
Rev. 03.1, 2016-06-14