PTF180101S Datasheet, PDF (6/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

PTF180101S
Typical Performance, WCDMA Operation
Two–Tone Drive–up
V_DD = 28V, I_DQ = 135 mA, f = 2170 MHz,
tone spacing = 1 MHz
-20
40
-25
Ef f ic iency
35
-30
30
-35
25
-40
20
-45
15
-50
IM3
10
-55
5
-60
0
20
25
30
35
40
45
Output Power (dBm), PEP
Single–Carrier WCDMA Drive–Up
V_DD = 28 V, I_DQ = 135 mA, f = 2170 MHz,
3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67%
clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth
-35
25
-40
20
Ef f icienc y
-45
15
ACPR
-50
10
-55
5
-60
0
17
22
27
32
37
Average Output Power (dBm)
Broadband Circuit Impedance Data
Z Source
D
Z Load
G
S
Frequency
MHz
1920
1930
1960
1990
2000
2020
Z Source Ω
R
jX
7.3
-2.3
8.1
-2.2
8.3
-2.6
6.5
-4.1
6.3
-4.0
6.2
-3.7
Z Load Ω
R
jX
4.6
2.4
4.6
2.5
4.5
2.6
4.5
2.5
4.5
2.5
4.6
2.5
Z₀ = 50 Ω
Z Load
2020 MHz
1920 MHz
Z Source
1920 MHz
2020 MHz
0.1
Data Sheet
6 of 10
Rev. P03, 2007-03-01