PTF180101S Datasheet, PDF (3/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

PTF180101S
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 10 W CW)
Ordering Information
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
58
0.333
–40 to +150
3.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Type
PTF180101S
Package Outline
H-32259-2
Package Description
Thermally enhanced, surface mount
Typical Performance measurements taken in broadband test fixture
Marking
PTF180101S
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 0.18 A, f = 1989.8 MHz
-50
50
400 kHz
-60
40
-70 ^{600 kHz}
30
-80
20
Ef f icienc y
-90
10
-100
0
25
30
35
40
Output Power (dBm)
EVM and Modulation Spectrum Performance
f = 1989.8 MHz, P_OUT = 3.5 W
8
-40
7
400 kHz ^-50
6
-60
600 kHz
5
-70
4 _EVM
-80
3
-90
2
-100
1
-110
0.00 0.05 0.10 0.15 0.20 0.25 0.30
Quiscent Drain Current (A)
Data Sheet
3 of 10
Rev. P03, 2007-03-01