PTF180101S Datasheet, PDF (4/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Typical Performance (cont.)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 0.18 A, f = 1990 MHz
21
20
Gain
19
18
Ef f icienc y
17
16
29
32
35
38
41
Output Power (dBm)
60
50
40
30
20
10
44
PTF180101S
Output Power, Gain & Efficiency (at P-1dB)
vs. Frequency
V_DD = 28 V, I_DQ = 0.18 A
25
70
24
Efficiency ⁶⁰
23
50
22
Output Pow er ⁴⁰
21
30
20
20
19
Gain
18
1900 1920
1940
1960
1980
2000
10
0
2020
Frequency (MHz)
Power Gain vs. Output Power
V_DD = 28 V, f = 1990 MHz
21
I_DQ = 0.235 mA
20 _{IDQ = 0.180 mA}
19 ^{IDQ = 0.135 mA}
18
0
1
10
100
Output Power (W)
Broadband Test Fixture Performance
V_DD = 28 V, I_DQ = 0.18 A, P_OUT = 10 W
50
15
Ef f icienc y
40
5
30
-5
Gain
20
-15
10
Return Loss
-25
0
1900
1930
1960
1990
Frequency (MHz)
-35
2020
Data Sheet
4 of 10
Rev. P03, 2007-03-01