PTF180101S Datasheet, PDF (1/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

PTF180101S
LDMOS RF Power Field Effect Transistor
10 W, 1805 – 1880 MHz, 1930 – 1990 MHz
10 W, 2110 – 2170 MHz
Description
The PTF180101S is a 10-watt, internally-matched GOLDMOS^® FET device
intended for EDGE applications in the DCS/PCS band. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
PTF180101S
Package H-32259-2
EDGE EVM Performance
EVM and Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 0.18 A, f = 1989.8 MHz
4
40
Ef f icienc y
3
30
2
20
1
10
EVM
0
0
25
30
35
40
Output Power (dBm)
RF Characteristics, EDGE Operation
Features
• RoHS-compliant, Pb-free package
• Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
• Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBc
• Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 50%
• Integrated ESD protection: Human Body
Model Class 1 (minimum)
• Low HCI drift, excellent thermal stability
• Capable of handling 10:1 VSWR @ 28 V, 10
W (CW) output power
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 4 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol Min
EVM (RMS) —
ACPR
—
ACPR
—
G_ps
—
η_D
—
Typ
Max
Unit
1.1
—
%
–60
—
dBc
–70
—
dBc
19
—
dB
28
—
%
table continued on next page
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. P03, 2007-03-01