PTF180101S Datasheet, PDF (5/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Typical Performance (cont.)
Broadband Test Fixture Performance
V_DD = 28 V, I_DQ = 0.18 A, P_OUT = 4 W
30
20
25 _Efficiency
10
20 _Gain
0
15
-10
10
-20
Return Loss
5
-30
0
1900
1930
1960
1990
-40
2020
Frequency (MHz)
PTF180101S
Output Power vs. Supply Voltage
I_DQ = 0.18 A, f = 1990 MHz
42
41
40
39
38
37
22
24
26
28
30
32
Supply Voltage (V)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, I_DQ = 0.18 A, f₁ = 1990 MHz, f₂ = 1991 MHz
-20
-30
3rd Order
-40
-50
-60 ^5th
-70
7th
-80
30 32 34 36 38 40 42
Output Power, PEP (dBm)
Gate-Source Voltage vs. Case Temperature
Voltage normalized to 1.0 V, series show current
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.05 A
0.28 A
0.51 A
0.74 A
0.97 A
1.20 A
0
20
40 60
80 100
Case Temperature (°C)
Data Sheet
5 of 10
Rev. P03, 2007-03-01