PTF180101S Datasheet, PDF (2/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

PTF180101S
RF Characteristics, EDGE Operation (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
η_D
IMD
18
19
30
33
—
–30
Max
—
—
–28
Unit
dB
%
dBc
RF Characteristics, WCDMA Operation
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 135 mA, P_OUT = 1.8 W,
f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF
Characteristic
Adjacent Channel Power Ratio
Gain
Drain Efficiency
Symbol Min Typ
ACPR
—
–45
G_ps
—
18
η_D
—
20
Max
—
—
—
Unit
dBc
dB
%
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 135 mA, P_OUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency @ –30 dBc IM3
Intermodulation Distortion
DC Characteristincs
Symbol Min Typ
G_ps
η_D
IMD
—
18
—
37
—
–30
Max
—
—
—
Unit
dB
%
dBc
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 A
V_DS = 28 V, I_DQ = 180 mA
V_GS = 10 V, V_DS = 0 V
Symbol Min Typ
V_(BR)DSS
65
—
I_DSS
—
—
R_DS(on)
—
0.83
V_GS
2.5
3.2
I_GSS
—
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Data Sheet
2 of 10
Rev. P03, 2007-03-01