PTFB211803EFL Datasheet, PDF (5/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (cont.)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.30 A, ƒ = 2170 MHz
19
60
18
50
17
16
15
14
42
Gain
Efficiency
+25 ° C
+85 ° C
–10° C
44
46
48
50
Output Power (dBm)
40
30
20
10
52
PTFB211803EL
PTFB211803FL
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.30 A, ƒ = 2170 MHz
19
55
18
Gain
45
17
35
Efficiency
16
25
15
15
41
43
45
47
49
51
53
Output Power (dBm)
-20
-30
-40
-50
-60
-70
40
Intermodulation Distortion
vs. Output Power
V_DD = 30 V, I_DQ = 1.30 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
3rd Order
5th
7th
45
50
55
Output Power, PEP (dBm)
Data Sheet
5 of 14
Rev. 05.1, 2016-06-15