PTFB211803EFL Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (data taken in a production test fixture)
PTFB211803EL
PTFB211803FL
Two-carrier WCDMA 3GPP
V_DD = 30 V, I_DQ = 1.30 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
19
40
18
30
Gain
17
20
16
10
Efficiency
15
0
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Single-carrier WCDMA Drive-Up
V_DD = 30 V, I_DQ = 1.30 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-20
40
-25
Efficiency
35
-30
30
-35
25
-40
ACP Low
20
-45
15
-50
10
ACP Up
-55
5
-60
0
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Single-carrier WCDMA, 3GPP Broadband
V_DD = 30 V, I_DQ = 1.30 A, P_OUT = 47 dBm
50
-10
40
IRL
-20
30
-30
Efficiency
20
ACP
-40
Gain
10
2080
2100
2120 2140 2160
Frequency (MHz)
2180
-50
2200
CW Performance
Gain vs. Output Power
V_DD = 30 V, ƒ = 2170 MHz
I_DQ = 1.80 A
18
17
I_DQ = 1.30 A
I_DQ = 0.90 A
16
15
41
43
45
47
49
51
53
Output Power (dBm)
Data Sheet
3 of 14
Rev. 05.1, 2016-06-15