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PTFB211803EFL Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs | |||
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PTFB211803EL
PTFB211803FL
RF Characteristics (cont.)
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.3 A, POUT = 38 W average, Æ1 = 2165 MHz, Æ2 = 2170 MHz, 3GPP signal, channel bandwidth =
3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Gps
16
17
â
dB
hD
28
29.5
â
%
Intermodulation Distortion
IMD
â
â32.5 â31.5
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 1.3 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
â
â
â
2.3
â
Typ
â
â
â
0.05
3.0
â
Max
â
1.0
10.0
â
3.3
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 180 W CW)
Symbol Value
VDSS
VGS
TJ
TSTG
RqJC
65
â6 to +10
200
â40 to +150
0.3
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB211803EL V1 R0
PTFB211803EL V1 R250
PTFB211803FL V2 R0
PTFB211803FL V2 R250
Order Code
PTFB211803ELV1R0XTMA1
PTFB211803ELV1R250XTMA1
PTFB211803FLV2R0XTMA1
PTFB211803FLV2R250XTMA1
Package Description Shipping
H-33288-6, bolt-down Tape & Reel, 50pcs
H-33288-6, bolt-down Tape & Reel, 250 pcs
H-34288-4/2, earless flange Tape & Reel, 50pcs
H-34288-4/2, earless flange Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 05.1, 2016-06-15
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