PTFB211803EFL Datasheet, PDF (13/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB211803EL
PTFB211803FL
Package Outline Specifications (cont.)
Package H-34288-4/2
45° X 2.032
[45° X .080]
2X 30°
V
22.860
[.900]
CL
D
2X 5.080
[.200]
2X 1.143
[.045]
V
4.889±.510
[.192±.020]
CL
4X
R0.508
+.381
-.127
[^{R.020+-.0.00155} ]
G
2X 12.700
[.500]
22.352±.200
[.880±.008]
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
4.039
+.254
-.127
[^{.159+-.0.00150}]
1.575
[.062] (SPH)
1.016
[.040]
H-34288-4/2_po_03_08-13-2012
CL
23.114
[.910]
S

Diagram Notes—unless otherwise specified:
Diag¹r^.am^InN^teo^rt^pe^rs^e—^{t d}uⁱn^mle^esⁿs^sio^otⁿh^ser^awⁿi^dse^tos^lp^ee^racⁿif^cie^ed^s: ^{per ASME Y14.5M-1994.}
2. _1.Pri_Im_nta_er_ry_pd_reim_{t d}e_in_ms_eio_nn_ss_ioa_nr_se_am_nm_d ._toA_lelt_re_ar_nn_ca_ete_s d_pi_em_re_An_Ss_Mio_Ens_Ya₁r₄e_.5in_Mc_-h₁e₉s₉._4.
3. _2.All_Pto_ril_mer_aa_rn_yce_ds_im±_e0_n._s1_i2_o7_ns[0_a.0_re05_m] _mun_. l_Ae_ls_tes_rs_np_ae_tecif_die_imd_eo_nth_sie_or_nw_sis_ae_r._{e inches.}
4. _3.Pin_As_l:_l D_tol–_erd_ar_na_cin_e;_sG_±–_0.g₁a₂t₇e;_[S_.00–₅s_]o_uu_nr_lc_ee_s;_sV_s–_peV_{cDifDied otherwise.}
5. _4.Lea_Pd_int_sh_:ic_Dkn₌e_ds_rs_a:_i0_n._;1_S0₌+_s0_o.0_u5_rc1_e/–_{; G}0.0₌2_g5_am_tem_{; V}[0₌.0_V0_D4_D+_. 0.002/–0.001 inch].
6. _5.Go_Lld_eap_dla_tt_hin_icg_kt_nh_eic_sk_sn_:e₀s_.1s₀: 0₊.2₀5_.0m₅i₁c_/r_–o₀n_.0[1₂0₅ m_mi_mcro_[.i₀n₀ch₄]₊m₀a_.0x₀._{2/–0.001 inch].}
6. Gold plating thickness: 0.25 micron [10 microinch] max.
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Data Sheet
13 of 14
Rev. 05.1, 2016-06-15