PTFB211803EFL Datasheet, PDF (12/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB211803EL
PTFB211803FL
Package Outline Specifications
Package H-33288-6
4X R1.524
[R.060]
45° X 2.032
[45° X .080]
4X 30°
V
4X 1.143
[.045] (4 PLS)
D
2X 5.080
[.200] (2 PLS)
4.889±.510
V
[.192±.020]
S
9.779
9.398 _[.385]
CL ^[.370]
19.558±.510
[.770±.020]
2X R1.626
[R.064]
E
G
F
CL
2X 12.700
[.500]
2X 22.860
[.900]
27.940
[1.100]
22.352±.200
[.880±.008]
4.039
+.254
-.127
[^{.159+-.0.00150}]
1.575
[.062] (SPH)
1.016
[.040]
CL
34.036
[1.340]
H-33288-6_po_01_10-03-2012
Diagram Notes—unless otherwise specified:
Diagr¹a^.m ^INⁿo^tete^rps^r—^etu^dnⁱl^mes^es^nsoⁱt^ohⁿe^srw^aiⁿs^de ^ts^op^lee^rc^aifⁿie^cd^e:^{s per ASME Y14.5M-1994.}
2._1. Pr_Ii_nm_tea_rr_py_red_tim_die_mn_es_nio_sn_ios_na_sre_anm_dm_to. _lA_el_rt_ae_nrn_ca_et_se_pd_eim_{r A}e_Sns_Mio_En_Ys₁a₄r_.e_5Minc_-1h₉e₉s₄. _.
3._2. Al_Pl t_ro_imle_ara_rync_de_ims _e±_n0_s.1_io2_n7_s[_a0_r.0_e0_m5]_mu_.n_Ale_lts_es_rns_ap_te_ec_dif_ii_med_eno_sth_ioe_nr_swi_as_re_e. _inches.
4._3. Pi_An_ls_l:_toD_le–_rad_nra_cein_s; G_{± 0}–_.1g₂a₇te_[;_.0S₀–_5]s_uo_nu_lr_ec_se_s; V_sp–_ecV_ifDiDe;_dE_o, _tF_he–_rwN_i._sC_e._.
5._4. Le_Pa_ind_st_:h_Aick₌n_ge_as_ts_e:_,0_B.1₌0 _s+_o0_u._r0_c5_e1_, /_C–0₌.0_d2_r5_aim_n,m_D[₌0._V00_D4_D,+_E0_, ._F00₌2_N/–_.0_C._.001 inch].
6._5. G_Lo_eld_ap_dla_thti_in_cg_knt_eh_sic_sk_:n₀e_.1ss₀: ₊0.₀2_.5₀₅m₁i_/c_–r₀o_.n₀₂[1₅0_mm_micr_[o_.0in₀c₄h₊] ₀m_.0a₀x₂. _{/–0.001 inch].}
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Data Sheet
12 of 14
Rev. 05.1, 2016-06-15