PTFB211803EFL Datasheet, PDF (4/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (cont.)
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.30 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
20
50
19
40
18
Gain
30
17
20
16
Efficiency
10
15
40
42 44 46 48 50 52
Output Power, PEP (dBm)
0
54
PTFB211803EL
PTFB211803FL
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.30 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
-15
50
-25
Efficiency
40
-35
30
IMD3
-45
20
-55
10
-65
0
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
Two-tone Broadband Performance
V_DD = 30 V, I_DQ = 1.30 A, P_OUT = 63 W
55
-10
45
-20
IRL
Efficiency
35
-30
IMD3
25
-40
Gain
15
2080
2100
2120 2140 2160 2180
Frequency (MHz)
-50
2200
Two-tone Drive-up at
Selected Frequencies
V_DD = 30 V, I_DQ = 1.30 A, tone spacing = 1 MHz
-20
2170MHz
2140MHz
-30
2110MHz
-40
-50
41
43
45
47
49
51
53
Output Power, PEP (dBm)
Data Sheet
4 of 14
Rev. 05.1, 2016-06-15