PTFB211803EFL Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB211803EL
PTFB211803FL
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
Description
The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 2110 to 2170 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced packages with
slotted or earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal perform-
ance and superior reliability.
PTFB211803EL
H-33288-6
PTFB211803FL
H-34288-4/2
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 1.30 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20
40
-25
35
-30
Efficiency
30
-35
25
-40
IMD Up
20
-45
ACPR ₁₅
-50
10
IMD Low
-55
5
-60
0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2170 MHz, 30 V
- Average output power = 40 W
- Linear Gain = 17.5 dB
- Efficiency = 29.7%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P_1dB = 180 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Integrated ESD protection.
• Capable of handling 10:1 VSWR @ 30 V,
180 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test–verified by design/characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.3 A, P_OUT = 40 W average, ƒ₁ = 2135 MHz, ƒ₂ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
—
17.5
—
dB
hD
—
29.5
—
%
Adjacent Channel Power Ratio
ACPR
—
–38
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 05.1, 2016-06-15