PTAB182002FC Datasheet, PDF (5/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002FC
Reference Circuit
R^P1F^O_^RIN^T
C102
100000000 pF
C103
10000000 pF
TL165
TL102
TL101
3
2
1
TL105
1
2
3
R105
1000 Ohm
TL104
TL103
1
2
3
C101
100000 pF
TL152 TL151 TL153 TL154
TL134 TL155
3
2
1
C104
24 pF
TL109
TL142
1
3
2
TL156
R102
10 Ohm
TL135 TL136
TL139
TL140
C107
TL106 ^{24 pF}
TL110
TL107 TL108 TL114 TL113 TL115 TL112
3
2
1
TL111
GATE DUT
(Pin G1)
TL137
TL138
TL121 U1
TL122
3
1
2
4
R101
50 Ohm
TL119
TL141
TL120
C106
TL127 ^{24 pF} TL128
TL124 TL132
TL125 TL133 TL123
2
1
3
TL130
TL131
GATE DUT
(Pin G2)
TL116
TL117 TL118
R103
10 Ohm
TL147
TL146 TL145
R104
1000 Ohm
C105
24 pF
TL129
TL143
1
3
2
TL144
TL158
TL163
1
2
3
C110
100000000 pF
TL160
TL159
3
2
1
TL161 TL162
1
2
3
C108
100000 pF
TL149
TL148 TL126 TL164
1
2
3
C109
10000000 pF
b182002fc-v1_BD-in_8-23-2012
TL157 TL150
εr = 3.66
H = 30 mil
RO/RO4350
Reference circuit input schematic for ƒ = 1880 MHz
Data Sheet
5 of 13
Rev. 04.1, 2016-06-09