PTAB182002FC Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002FC
Thermally-Enhanced High Power RF LDMOS FET
190 W, 28 V, 1805 – 1880 MHz
Description
The PTAB182002FC is a 190-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1880 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTAB182002FC
Package H-37248-4
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 530 mA, ƒ = 1842 MHz, 3GPP
WCDMA, PAR = 8:1,
10 MHz carrier spacing, 3.84MHz BW
17
55
50
16
45
Gain
40
15
35
30
14
25
Efficiency
20
13
b182002fc gr1
15
36 38 40 42 44 46 48
Average Output Power (dBm)
Features
• Asymmetric Doherty design
- Main: P_1dB = 70 W Typ
- Peak: P_1dB = 120 W Typ
• Broadband internal matching
• Typical two-carrier WCDMA performance at
1842 MHz, 28 V (Doherty configuration)
- Average output power = 44.6 dBm
- Linear Gain = 15.5 dB
- Efficiency = 46%
- IMD = –25 dBc
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Integrated ESD protection
• Capable of handling 3:1 VSWR @ 30 V,
50 W (average) output power (one-carrier WCDMA
signal, 10 dB PAR, Doherty test fixture)
• Pb-free and RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon Doherty test fixture)
V_DD = 28 V, V_GSPK = (V_GS at I_DQ = 900 mA)–1.80 V, I_DQ = 520 mA, P_OUT = 29 W avg., ƒ₁ = 1870 MHz, ƒ₂ = 1880 MHz, 7.5 dB PAR
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G_ps
h_D
IMD
Min
Typ
Max
14.5
15.5
—
42
44
—
—
–26.5
–24
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 04.1, 2016-06-09