PTAB182002FC Datasheet, PDF (12/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002FC
Package Outline Specifications
Package H-37248-4
2X 4.83±0.51
[.190±0.020]
2X 45° X 2.72
[45° X .107]
(8.89
[.350])
CL
(5.08
[.200])
D1
D2
4X R0.76+-00.3.183
[
R.030
+0.005
-0.015
]
FLANGE 9.78
[.385]
LID 9.40
[.370]
CL
19.43±0.51
[.765±0.020]
G1
G2
SPH 1.57
[.062]
2X 12.70
[.500]
19.81±0.20
[.780±0.008]
4X 3.81
[.150]
1.02
[.040]
0.0381 [.0015] -A-
H-37248-4_po_02_01-09-2013

3.76±0.25
[.148±0.010]
CL
S
20.57
[.810]
Diagr_Dam_iagN_rao_mtes_N—_ou_ten_sle_—s_us_no_leth_se_srw_oti_hs_ee_rs_wp_ise_eci_sfi_pe_ed_c: _ified:
1. ₁In_.ter_Inp_tr_ee_rt_pd_ri_em_t e_dn_imsi_eo_nn_ss_ioa_nn_sd_at_no_dler_toa_ln_ec_re_as_ncp_ee_sr _pA_eS_rM_AE_SMY1_E4_Y.5₁M_4.-₅1_M99_-14₉. _94.
2. ₂P_.rim_Pa_rr_imy d_arim_y e_dn_imsi_eo_nn_ss_ioa_nr_se _am_rem_m. A_mlt_.e_Arn_lta_et_re_nad_tim_e e_dn_imsi_eo_nn_ss_ioa_nr_se _ain_rech_ine_cs_h. _es.
3. ₃A_.ll to_Al_le_l r_ta_on_lec_re_as_nc±_e0_s._±12₀7_.1[₂.0₇0_[5₀]_.0u₀n₅le_]s_. s specified otherwise.
4. ₄P_.ins_P: _iD_ns1_:, _DD₁2 _-–_pd_er_aa_kin_ss_i;_dG_e 1_d,_raG_in2_;–_Gg₁a_-te_ps_e;_aS_k –_{s id} s_eo_gu_arc_tee._{; D2 - main side drain,}
5. LeadG2th-icmknaeinsss:id0e.1g0a+te0; .S07-6s/o–u0r.c0e2.5 mm [0.004+0.003/–0.001 inch].
6. 5G.oldLepaladtitnhgictkhniceksnse: s0s.1: 01.+104.0±706./3–80.m02ic5ro[0n.0[4054+±01.050m3/i–cr0o.0in0c1h]]..
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
(http://www.infineon.com/rfpower)
Data Sheet
12 of 13
Rev. 04.1, 2016-06-09