PTAB182002FC Datasheet, PDF (10/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002FC
Reference Circuit (cont.)
R04350, .030 (105) VGS(PK)
C102
R105
R101
C101
C107
C103
C104
R102
C203 C207
C208
R04350, .030 (62)
C210
VDD
C204
RF_IN
S1
VGS
R104
C110
C106
R103
C108
C105
C109
PTAB182002F_IN_02_D
Reference circuit assembly diagram (not to scale)
Components Information
Component
Description
Input
C101, C108
C102, C110
C103, C109
C104, C105, C106, C107
R101
R102, R103
R104, R105
U1 / S1
Output
C201, C203, C204, C205
C202, C207, C208, C209
C206, C210
Chip capacitor, 0.1 µF
Capacitor, 100 µF
Capacitor, 10 µF
Chip capacitor, 24 pF
Resistor, 50 W
Resistor, 10 W
Resistor, 1000 W
90° RF directional coupler
Chip capacitor, 24 pF
Capacitor, 10 µF
Capacitor, 220 µF
RF_OUT
C205
Template
C201
C209
C202
C206
VDD
PTAB182002F_OUT_02_D
b182002fc-v1_CD_ 9-10-2012
Suggested Supplier
Kemet
Panasonic
Taiyo Yuden
ATC
Anaren
Panasonic
Panasonic
Anaren
ATC
Taiyo Yuden
Panasonic
P/N
C120C104K5RACTU
EEE-FP1V101AP
UMK325C7106MM-T
ATC100A240JW150XB
C16A5024
ERJ-8GEYJ100V
ERJ-8GEYJ102V
X3C19P1-05S
ATC100A240JW150XB
UMK325C7106MM-T
EEEFP1V221AP
Data Sheet
10 of 13
Rev. 04.1, 2016-06-09