PTAB182002FC Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002FC
Typical Performance (cont.)
Single-carrier WCDMA, 3GPP Signal
Broadband Performance
V_DD = 28 V, I_DQ = 530 mA,
V_GS = 1.2V, P_OUT = 29 W
50
45 ^Efficiency
40
35
30
25
20
Gain
15
10 ^OPAR
5
1725 1765 1805 1845 1885
Frequency (MHz)
0
-5
IRL -10
-15
-20
-25
ACP _-30
-35
-40
1925
b182002fc gr6-b
-45
1965
Power Sweep, CW
V_DD = 28 V, I_DQ = 530 mA, V_GS = 1.2 V
1805 MHz
18 _{1842 MHz}
17 ^{1880 MHz}
16
Gain
15
65
55
Efficiency ₄₅
35
14
25
13
15
12
b182002fc gr9
5
38 40 42 44 46 48 50 52 54
Output Power (dBm)
Load Pull Performance
Z Source
G
G
D ^{Z Load}
S
D
Main Side Load Pull Performance – Pulsed CW signal: 12 µsec, 10% duty cycle; 28 V, 530 mA
Class AB
Max Output Power
P_1dB
Max PAE
Freq
[MHz]
Zs W
Zl W
Gain [dB] P_OUT P_OUT [W] PAE %
[dBm]
Zl W
Gain [dB]
P_OUT
[dBm]
P_OUT [W]
1805
5.9 – j9.5 2.8 – j5.4 17.4
50.50
112
56.0 6.1 – j6.3 19.7
48.63
73
1842
7.5 – j9.7 2.7 – j5.7 17.2
50.26
106
54.4 6.9 – j4.8 20.0
48.08
64
1880 9.5 – j10.3 3.0 – j5.7 17.8
50.28
107
56.1 6. 7– j5.2 20.1
48.38
69
PAE %
67.0
66.2
66.3
Peak Side Load Pull Performance – Pulsed CW signal: 12 µsec, 10% duty cycle; 28 V, 10 mA
Class C
Max Output Power
P_1dB
Max PAE
Freq
[MHz]
Zs W
Zl W
Gain
[dB]
P_OUT P_OUT [W] PAE %
[dBm]
Zl W
Gain [dB] P_OUT P_OUT [W] PAE %
[dBm]
1805 11.0 – j6.1 1.3 – j5.5 15.7
52.43
175
54.4
2.8 – j4.5 17.7
50.60
115
70.2
1842 8.0 – j4.8 1.3 – j5.8 16.2
52.38
173
54.7
2.7 – j4.7 17.8
50.50
112
69.0
1880 6.7 –j2.4 1.4 – j6.0 16.8
52.33
171
54.9
2.7 – j4.8 18.0
50.40
110
68.5
Data Sheet
4 of 13
Rev. 04.1, 2016-06-09