PTAB182002FC Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002FC
Typical Performance (data taken in a production Doherty test fixture)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 530 mA,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.84 MHz BW
-20
1880
1842
1805
-25
-30
-35
36
IMD Low
IMD Up
b182002fc gr2
38 40 42 44 46 48
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 530 mA, ƒ = 1842 MHz, 3GPP
WCDMA, PAR = 8 dB,
10 MHz carrier spacing, 3.84MHz BW
-20
55
IMD Up
50
-25 IMD Low
45
40
-30
35
ACPR ₃₀
-35
Efficiency
25
20
-40
b182002fc gr3
15
35 37 39 41 43 45 47 49
Frequency (MHz)
Single-carrier WCDMA
V_DD = 28 V, I_DQ = 530 mA, V_GS = 1.2 V
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
12
16
11
Gain
10
15
9
8 _{1805 MHz}
7
1842 MHz
1880 MHz
OPAR
6
36 38 40 42 44 46
Output Power (dBm)
14
b182002fc gr4-b
13
48
Single-carrier WCDMA
V_DD = 28 V, I_DQ = 530 mA, V_GS = 1.2 V
3GPP_WCDMA, 10 dB PAR, 3.84 MHz BW
-25
55
-27
50
-29
ACP
-31
-33
45
40
Efficiency
35
-35
-37
-39
-41
36
30
1805 MHz
25
1842 MHz
1880 MHz
20
b182002fc gr5-b
15
38 40 42 44 46 48
Output Power (dBm)
Data Sheet
3 of 13
Rev. 04.1, 2016-06-09