PTAB182002FC Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-source Breakdown Voltage
V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
—
V
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1.0
µA
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
10.0
µA
On-state Resistance (main)
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.15
—
W
On-state Resistance (peak)
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.09
—
W
Operating Gate Voltage (main)
V_DS = 28 V, I_DQ = 520 mA
V_GS
2.5
3.0
3.5
V
Operating Gate Voltage (peak)
V_DS = 28 V, I_DQ = 0 mA
V_GS
0.7
1.1
1.5
V
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Drain-source Voltage
V_DSS
Gate-source Voltage
V_GS
Junction Temperature
T_J
Storage Temperature Range
T_STG
Thermal Resistance (main, T_CASE = 70°C, 80 W CW class AB) R_qJC
Thermal Resistance (peak, T_CASE = 70°C, 110 W CW class C) R_qJC
Value
65
–6 to +10
200
–40 to +150
0.86
0.64
Unit
V
V
°C
°C
°C/W
°C/W
Ordering Information
Type and Version
PTAB182002FC V1 R0
PTAB182002FC V1 R250
Order Code
Package and Description Shipping
PTAB182002FCV1R0XTMA1 H-37248-4, ceramic open-cavity, earless flange
Tape & Reel, 50 pcs
PTAB182002FCV1R250XTMA1 H-37248-4, ceramic open-cavity, earless flange
Tape & Reel, 250 pcs
Data Sheet
2 of 13
Rev. 04.1, 2016-06-09