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TLE7809G Datasheet, PDF (43/52 Pages) Infineon Technologies AG – Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (16kB Flash)
TLE7809G
General Product Characteristics
Table 14 Electrical Characteristics (cont’d)
VS = 13.5 V, Tj = -40 °C to +125 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
16.4.116 DI hold time
tDIHO
16.4.117 Input signal rise time at pin trIN
DI, CLK and CSN
50
–
–
–
–
ns –
50
ns –
16.4.118 Input signal fall time at pin tfIN
DI, CLK and CSN
–
–
50
ns –
16.4.119 Delay time for mode
tfIN
change from Normal Mode
to Sleep Mode
–
–
10
μs –
16.4.120 CSN high time
Data Output Timing1)
tCSN(high)
10
–
–
μs –
16.4.121 DO rise time
trDO
16.4.122 DO fall time
tfDO
16.4.123 DO enable time
tENDO
16.4.124 DO disable time
tDISDO
ADC Measurement Interface (general)
–
30
–
30
–
–
–
–
16.4.125 ADC reference voltage VAREF
2.45 2.5
ADC Battery Voltage Measurement Interface, VBAT_SENSE
16.4.126 Max. measurement input Vbat_fs
voltage (full scale)
19.2 20
80
ns
80
ns
50
ns
50
ns
2.55 V
20.8 V
CL = 100 pF
CL = 100 pF
low impedance
high impedance
4) interconnect
–
16.4.127 Measurement input
impedance
16.4.128 Vbat_sense input filter
bandwidth
Rbat_sense
0.8
1.6
2.2
MΩ measurement I/F = on
bw
–
50
–
kHz 1)
16.4.129 Measurement input
leakage current
16.4.130 Measurement accuracy
after μController-based
calibration
16.4.131 Settling time
Ibat_sense
–
Tset
ADC Temperature Measurement Interface
-0.5 –
-300 –
–
–
0.5 μA measurement I/F = off;
Vbat_sense = 13.5 V
300
mV 4 < Vbat_sense < Vbat_fs;
VCC ≥ 4.5 V
30
μs 4) CSN high to settled
output voltage VA
16.4.132 Temp. Measurement
TJ
Range
16.4.133 Temp. sensor offset
m0
voltage
16.4.134 Temp. coefficient
m1
-40 –
125 °C via on-chip sensor
–
3.82 –
V
1)VA = m0 - m1 x TJ
–
5.94 –
mV/K 1)
Data Sheet
43
Rev. 3.01, 2008-04-15