TLE7809G Datasheet, PDF (41/52 Pages) Infineon Technologies AG – Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (16kB Flash)

TLE7809G
General Product Characteristics
Table 14 Electrical Characteristics (cont’d)
V_S = 13.5 V, T_j = -40 °C to +125 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
16.4.90 Bus pull-up resistance
R_bus
20
30
60
kΩ Active/Standby Mode
(LIN Spec 1.3 (2.0);
Line 10.2.2 (3.2.2))
16.4.91 LIN output current
I_lin
5
Dynamic LIN Transceiver Characteristics³⁾
20
60
μA Sleep mode; V_bus = 0 V
16.4.92 Slew rate falling edge
S_fslope
-3
–
-1
V/μs 60% > V_bus > 40%;
1 μs < (τ = R_l × C_bus)
< 5 μs; V_S = 13.5 V;
Active Mode
(LIN Spec 1.3;
Line 10.3.1)
16.4.93 Slew rate rising edge
S_rslope
1
–
3
V/μs 40% < V_bus < 60%;
1 μs < (τ = R_l × C_bus)
< 5 μs; V_S = 13.5 V;
Active Mode
(LIN Spec 1.3;
Line 10.3.1)
16.4.94 Slope symmetry
t_slopesym
-5
–
5
μs
t_fslope - t_rslope;
V_S = 13.5 V
(LIN Spec 1.3;
Line 10.3.3)
16.4.95 Propagation delay
TxD LOW to bus
t_d(L),T
–
1
4
μs (LIN Spec 1.3;
Line 10.3.6)
16.4.96 Propagation delay
TxD HIGH to bus
t_d(H),T
–
1
4
μs (LIN Spec 1.3;
Line 10.3.6)
16.4.97
Propagation delay
Bus dominant to RxD
LOW
t_d(L),R
–
1
6
μs C_RxD = 20 pF;
R_RxD = 2.4 kΩ
(LIN Spec 1.3;
Line 10.3.7)
16.4.98
Propagation delay
Bus recessive to RxD
HIGH
t_d(H),R
–
1
6
μs C_RxD = 20 pF;
R_RxD = 2.4 kΩ
(LIN Spec 1.3;
Line 10.3.7)
16.4.99 Receiver delay symmetry t_sym,R
-2
–
2
μs
t_sym,R = t_d(L),R - t_d(H),R
(LIN Spec 1.3;
Line 10.3.8)
16.4.100 Transmitter delay
symmetry
t_sym,T
-2
–
2
μs
t_sym,T = t_d(L),T - t_d(H),T
(LIN Spec 1.3;
Line 10.3.9)
16.4.101 Wake-up delay time
16.4.102 TxD dominant time out
16.4.103 TxD dominant time out
recovery time
t_wake
t_timeout
t_torec
30
100 150 μs T_j ≤ 125 °C
6
12
20
ms V_TxD = 0 V
–
10
–
μs
V_TxD = 5 V¹⁾
Data Sheet
41
Rev. 3.01, 2008-04-15