HYB18T256324F-16 Datasheet, PDF(42/80 Page) Infineon Technologies AG – 256-Mbit GDDR3 DRAM [600MHz]

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HYB18T256324F-16 Datasheet, PDF (42/80 Pages) Infineon Technologies AG – 256-Mbit GDDR3 DRAM [600MHz]

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HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

3.7.5 Write followed by Read

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Figure 25 Write followed by Read

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1. Shown with nominal value of tDQSS.

2. The RD command may be either for the same bank or another bank.

3. WDQS can only transition when data is applied at the chip input and during pre- and postambles.

Data Sheet

42

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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