1EDI30J12CP Datasheet, PDF (24/28 Pages) Infineon Technologies AG – 1EDI EiceDRIVER™ Enhanced

800V
+5V
CVCC1
GND
LS_IN
VCC1 JFDrv
VCC2
GND1 MDrv
EN
VReg
IN
CLJFG
VEE2
BSEN
1EDI30J12Cx
CVReg CVEE2
EiceDRIVER™ Enhanced
1EDI30J12CP
Application Hints
+5V
CVCC1
GND
LS_IN
VCC1 JFDrv
VCC2
GND1 MDrv
EN
VReg
IN
CLJFG
VEE2
BSEN
1EDI30J12Cx
CVReg CVEE2
C
-25V_H
+5V
CVCC1
GND
LS_IN
VCC1 JFDrv
VCC2
GND1 MDrv
EN
VReg
IN
CLJFG
VEE2
BSEN
1EDI30J12Cx
CVReg
CVEE2
+5V
CVCC1
GND
LS_IN
VCC1 JFDrv
VCC2
GND1 MDrv
EN
VREG
IN
CLJFG
VEE2
BSEN
1EDI30J12Cx
CVReg
CVEE2
C
-25V
Figure 14 Application drawing for high side bootstrap supply (FB), low-side normally-on (refer to
Figure 6 for low-side normally-off variant)
Figure 14 shows a full bridge with a normally-on low-side configuration. The high-side stages are powered with
bootstrapping while the low-side stages are powered with an isolated and fixed supply that is GND related.
The corresponding normally-off variant can be seen in Figure 6
6.2
Gate clamping diode
The external gate clamping diode connects the JFET gate to the MOSFET drain potential. In case the auxiliary
power supply of the driver is not active due to power supply failure or reverse startup this diode ensures the
normally-off behavior of the circuit.
Due to the normally-on behavior of the JFET and the cascoded normally-off MOSFET, the voltage is being blocked
at the MOSFET. The Vds voltage that is building up over the switched-off MOSFET is being mirrored to the JFET
Vgs voltage via gate clamping diode connecting the MOSFET drain to the JFET gate until the level reaches the
JFET pinch off voltage and the JFET itself blocks the voltage (see Chapter 3.2.3).
The voltage rating of the diode is mainly depenent on the parasitic inductance between JFET source and
MOSFET drain times the current change over time. An Infineon BAS16 diode capable of blocking 80 V should be
sufficient for most layouts.
A resistor should be placed in series with the diode to limit the current through the diode. It has to be matched to
the maximum current rating of the used diode. Typically it should be around 5 times larger than the gate resistance
in order not to slow down the turn-on of the JFET.
Preliminary Datasheet
23
Rev. 1.3, 2014-11-12