1EDI30J12CP Datasheet, PDF (19/28 Pages) Infineon Technologies AG – 1EDI EiceDRIVER™ Enhanced

EiceDRIVER™ Enhanced
1EDI30J12CP
Characteristics
Table 8 MOSFET Driver (Reference is VCC2) (cont’d)
Parameter
Symbol
Values
Min.
Typ.
High Level Output Peak
I_MDrvH
2
3
Current
Output Voltage at Low State V_MDrvL
V_VREG
+0.26
V_VREG
+1.0
2.0
Low Level Output Peak Current I_MDrvL
-2
Rise Time MDrv
t_MDrvR
65
Fall Time MDrv
t_MDrvF
165
Max.
V_VREG
+0.55
V_VREG
-2.1
—
-1
110
270
Unit
A
V
V
V
A
ns
ns
1) The parameter is not subject to production test - verified by design/characterisation
Note / Test Condition
1)
I_MDrv=-150mA
I_MDrv=-0.5A
I_MDrv=-1.0A¹⁾
1)
V_VREG=19V,
C_LOADM= 22 nF,
VL 20% to VH 80%
Table 9 Dynamic Characteristics
Parameter
Symbol
Input to output propagation
delay ON (IN: L to H)
Input to output propagation
delay OFF (IN: H to L)
Enable to output propagation
delay ON (EN: L to H)
Enable to output propagation
delay OFF (IN: H to L)
Input to output propagation
delay distortion t_PDON-t_PDOFF
t_PDON
t_PDOFF
t_{PDON_EN}
t_{PDOFF_EN}
t_PDDISTO
Min.
53
53
170
60
-4.0
Input to output propagation
t_PDDISTOT
-20
delay distortion due to temp
Input to output propagation
delay ON bootstrap mode²⁾
t_PDONBS
Values
Unit
Typ.
Max.
80
106
ns
80
106
ns
290
390
ns
110
140
ns
12
ns
20
ns
300
ns
Input to output propagation
delay OFF bootstrap mode²⁾
t_PDOFFBS
300
ns
IN input pulse surpression
T_MININ
29
40
68
Switching frequency
f_SW
2
1) The parameter is not subject to production test - verified by design/characterisation
2) See Figure 8
ns
MHz
Note / Test Condition
V_VCC1=5V, C_LOADJ=
100 pF, V_IN=50%,
V_JFDrv=50%, V_EN=H
T_J=25°C
V_VCC1=5V, C_LOADJ=
100 pF, V_EN=50%,
V_JFDrv=50%, V_IN=H
V_VCC1=5V, C_LOADJ=
100 pF, V_IN=50%,
V_JFDrv=50%, V_EN=H
1)
V_VREG=-19V,
V_VCC1=5V, C_LOADJ=
100 pF, C_LOADM=22nF,
V_IN=50%, V_JFDrv=50%
V_VREG=-19V,
V_VCC1=5V, C_LOADJ=
100 pF, C_LOADM=22nF,
V_IN=50%, V_MDRV=-1.9V
V_VCC1=5V
Preliminary Datasheet
18
Rev. 1.3, 2014-11-12