HYS64D64300GU Datasheet, PDF (23/40 Pages) Infineon Technologies AG – 184-Pin Unbuffered Dual-In-Line Memory Modules

HYS[64/72]D[64300/128320][G/H]U–[5/6]–B
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Table 15 I_DD Specification for HYS[64/72]D[64/128][300/320]HU–6–B
Product Type
Unit Note ¹⁾²⁾
Organization 512MB
512MB
1 GB
1 GB
×64
×72
×64
×72
1 Rank
1 Rank
2 Ranks
2 Ranks
–6
–6
–6
–6
Symbol
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
Typ. Max. Typ. Max. Typ. Max. Typ. Max.
720 840 810 950 1000 1170 1130 1310 mA ³⁾
760
920
860
1040 1040 1250 1170 1400 mA ³⁾⁴⁾
20
30
30
40
50
60
50
70
mA ⁵⁾
200 240 230 270 400 480 450 540 mA ⁵⁾
140 190 150 220 270 380 310 430 mA ⁵⁾
90
120
100
140
180
240
200
270
mA ⁵⁾
280 330
320 370 560 660 630 740 mA ⁵⁾
680 840
770 950
960
1170 1080 1310 mA ³⁾⁴⁾
720 880 810 990 1000 1210 1130 1360 mA ³⁾
1720 2040 1940 2300 2000 2370 2250 2660 mA ³⁾
23
46
26
51
46
91
52
103
mA ⁵⁾
2200 2600 2480 2930 2480 2930 2790 3290 mA ³⁾⁴⁾
1) DRAM component currents only
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the component I_DDx data sheet values as:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included into calculations: module I_DD values will be measured differently depending on
load conditions
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
[
Data Sheet
23
Rev. 1.0, 2004-05
10042003-RYU3-RQON