HYS64D64300GU Datasheet, PDF (22/40 Pages) Infineon Technologies AG – 184-Pin Unbuffered Dual-In-Line Memory Modules

HYS[64/72]D[64300/128320][G/H]U–[5/6]–B
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Table 14 I_DD Specification for HYS[64/72]D[64/128][300/320]HU–5–B
Product Type
Unit Note ¹⁾²⁾
Organization 512MB
512MB
1GB
1GB
×64
×64
×64
×72
1 Rank
1 Rank
2 Ranks
2 Ranks
–5
–5
–5
–5
Symbol
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
Typ. Max. Typ. Max. Typ. Max. Typ. Max.
800 920 900 1040 1110 1300 1250 1460 mA ³⁾
880 1040 990 1170 1190 1420 1340 1590 mA ³⁾⁴⁾
20
40
30
40
50
70
50
80
mA ⁵⁾
240 290 270 320 480 580 540 650 mA ³⁾
150 210 170 230 300 420 340 470 mA ⁵⁾
100 130 110 140 190 260 220 290 mA ⁵⁾
310 380 350 420 620 750 700 850 mA ⁵⁾
800 960 900 1080 1110 1340 1250 1500 mA ³⁾⁴⁾
840 1000 950 1130 1150 1380 1300 1550 mA ³⁾
1920 2320 2160 2610 2230 2700 2510 3030 mA ³⁾
23
46
26
51
46
91
52
103
mA ⁵⁾
2480 2920 2790 3290 2790 3300 3140 3710 mA ³⁾⁴⁾
1) DRAM component currents only
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the component I_DDx data sheet values as:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included into calculations: module I_DD values will be measured differently depending on
load conditions
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
22
Rev. 1.0, 2004-05
10042003-RYU3-RQON