TC1797 Datasheet, PDF (188/190 Pages) Infineon Technologies AG – 32-Bit Single-Chip Microcontroller

TC1797
Electrical Parameters
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5.4.3 Flash Memory Parameters
The data retention time of the TC1797’s Flash memory (i.e. the time after which stored
data can still be retrieved) depends on the number of times the Flash memory has been
erased and programmed.
Table 34 Flash Parameters
Parameter
Symbol
Min.
Values
Typ. Max.
Unit Note /
Test Condition
Program Flash
Retention Time,
Physical Sector¹⁾²⁾
t_RET
20
CC
––
years Max. 1000
erase/program
cycles
Program Flash
Retention Time
Logical Sector¹⁾²⁾
t_RETL
20
CC
––
years Max. 100
erase/program
cycles
Data Flash
Endurance
(64 KB)
N_E
30 000 – –
CC
cycles Max. data
retention time
5 years
Data Flash Endurance, N_E8
120000 – –
EEPROM Emulation
CC
(4 × 16 KB)
cycles Max. data
retention time
5 years
Programming Time
per Page³⁾
t_PR
–
CC
–5
ms –
Program Flash Erase t_ERP
–
Time per 256-KB Sector
CC
–5
s
f_CPU = 180 MHz
Data Flash Erase Time t_ERD
–
for 2 × 32-KB Sectors
CC
– 2.5
s
f_CPU = 180 MHz
Wake-up time
t_WU
–
CC
–
4000/f_CPU µs
–
+ 180
1) Storage and inactive time included.
2) At average weighted junction temperature T_j = 100^oC, or
the retention time at average weighted temperature of T_j = 110^oC is minimum 10 years, or
the retention time at average weighted temperature of T_j = 150^oC is minimum 0.7 years.
3) In case the Program Verify feature detects weak bits, these bits will be programmed once more. The
reprogramming takes additional 5 ms.
Data Sheet
184
V1.1, 2009-04