HYS72D128300GBR Datasheet, PDF (18/45 Pages) Infineon Technologies AG – 184-Pin Registered Double Data Rate SDRAM Module

HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B
Registered Double Data Rate SDRAM Module
Electrical Characteristics
Table 10 I_DD Specification for –6
Unit
Note ¹⁾²⁾
1GB
1 GB
2 GB
×72
×72
×72
1 Rank
2 Ranks
2 Ranks
–6
–6
–6
Symbol
typ.
max. typ.
max.
typ.
max.
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
2350
2710 1873
2116
3016
3502
mA
3)
2620
2980 2008
2251
3286
3772
mA
3)4)
484
502 484
502
538
574
mA
5)
880
970 880
970
1330
1510
mA
5)
736
862 736
862
1042
1294
mA
5)
628
700 628
700
826
970
mA
5)
1096
1222 1096
1222
1762
2014
mA
5)
2620
2980 2008
2251
3286
3772
mA
3)4)
2710
3070 2053
2296
3376
3862
mA
3)
4690
5500 3043
3511
5356
6292
mA
3)
475
523.6 475
523.6
520
617.2
mA
5)
6310
7300 3853
4411
6976
8092
mA
3)4)
1) DRAM component currents only
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the component I_DDx data sheet values as:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included into calculations: module I_DD values will be measured differently depending on
load conditions
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
18
Rev. 0.5, 2003-12