TLE4966V-1K_15 Datasheet, PDF (13/24 Pages) Infineon Technologies AG – In Plane Sensing with Vertical Dual Hall Effect Latch for Automotive Applications

TLE4966V-1K
Functional Description
2.5
Application Circuit
The Figure 2-6 below shows the basic option of an application circuit. The Resistor Rq has to be in a dimension
to match the applied Vs to keep Iq limited to the operating range of maximal 10mA.
For example: Vs = 12V, Iq = 10mA --> R = 12V / 0.01A = 1.2kΩ.
In Figure 2-7 the additional ESD Diodes are optional to achieve an increased ESD robustness at the Q pins.
Additional with the (optional) 47nF between Vdd and GND a high system level robustness is achieved.
V_S
R_Q R_Q
Q₁
Q₂
GND
Figure 2-6 Basic Application Circuit
V_S
R_S = 100Ω
R_Q = 1.2kΩ
V_DD
Q₁
C_DD = 47nF
Q2
GND
TVS diodes
e.g. ESD24VS2U
Figure 2-7 Enhanced Application Circuit for very high ESD robustness on system level
Data Sheet
13
Revision 1.0, 2014-05-13