TLE4966V-1K_15 Datasheet, PDF (11/24 Pages) Infineon Technologies AG – In Plane Sensing with Vertical Dual Hall Effect Latch for Automotive Applications

2.3
Block Diagram
V _DD
TLE4966V-1K
Functional Description
Voltage Regulator
(reverse polarity protected)
ESD
Oscillator
& Sequencer
Bias and
Compensation
Circuits
Speed
&
Direction
Detection
Chopped _Amplifier
Hall
Probe
Comparator
Filter
with
Hysteresis
GND
Q2 (=Speed)
Control
Overtemperature
& short-circuit
protection
Q1 (=Direction)
Control
Overtemperature
& short-circuit
protection
Figure 2-4 Functional Block Diagram of the TLE4966V-1K
The chopped Dual Hall IC switch comprises a Hall probe, bias generator, compensation circuits, oscillator and
output transistor.
The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the
temperature behavior and reduce influence of technology variations.
The active error compensations (chopping technique) rejects offsets in the signal path. Therefore the influence of
mechanical stress to the Hall elements caused by molding and soldering processes and other thermal stress in
the package is minimized. The chopped measurement principle together with the threshold generator and the
comparator ensures highly accurate and temperature stable magnetic thresholds. The output transistor has an
integrated over current and over temperature protection to prevent the device from destruction.
Data Sheet
11
Revision 1.0, 2014-05-13