ICS849S625I Datasheet, PDF (6/24 Pages) Integrated Device Technology – Ten selectable differential LVPECL or LVDS outputs

ICS849S625I Data Sheet
CRYSTAL-TO-LVPECL/LVDS CLOCK SYNTHESIZER
Table 4C. LVCMOS/LVTTL DC Characteristics, V_CC = V_CCO = 3.3V ± 5%, V_EE = 0V, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
Typical
V_IH
Input High Voltage
V_CC = 3.3V
V_IL
Input Low Voltage
V_CC = 3.3V
REF_CLK, BYPASS, MR,
Input
I_IH
High
SELA[1:0], SELB[1:0],
SELC[1:0], SEL_OUT
V_CC = V_IN = 3.465V
Current
OEA, OEB, OEC
V_CC = V_IN = 3.465V
REF_CLK, BYPASS, MR,
I_IL
Input
SELA[1:0], SELB[1:0],
Low Current ^{SELC[1:0], SEL_OUT}
V_CC = 3.465V, V_IN = 0V
OEA, OEB, OEC
V_CC = 3.465V, V_IN = 0V
2.2
-0.3
-10
-150
Maximum
V_CC + 0.3
0.8
150
10
Units
V
V
µA
µA
µA
µA
Table 4D. LVPECL DC Characteristics, V_CC = V_CCO = 3.3V ± 5%, V_EE = 0V, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
Typical
V_OH
V_OL
V_SWING
Output High Voltage
Output Low Voltage
Peak-to-Peak
Output Voltage Swing
V_CCO – 1.2
V_CCO – 2.0
0.6
Maximum
V_CCO – 0.7
V_CCO – 1.5
1.0
Units
V
V
V
Table 4E. LVDS DC Characteristics, V_CC = V_CCO = 3.3V ± 5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
V_OD
V_OD
V_OS
V_OS
Differential Output Voltage
V_OD Magnitude Change
Offset Voltage
V_OS Magnitude Change
268
1.125
Typical
Maximum
475
50
1.375
50
Units
mV
mV
V
mV
ICS849S625BYI REVISION A OCTOBER 1, 2012
6
©2012 Integrated Device Technology, Inc.