ICS8402015I Datasheet, PDF (6/19 Pages) Integrated Device Technology – FemtoClock™ Crystal-to-LVDS/LVCMOS Frequency

ICS8402015I Datasheet
FEMTOCLOCK™ CRYSTAL-TO-LVDS/LVCMOS FREQUENCY SYNTHESIZER
Table 4C. LVCMOS/LVTTL DC Characteristics, V_DD = V_{DDO_A} = V_{DDO_B} = V_{DDO_REF} = 3.3V±5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum
V_IH
Input High Voltage
V_IL
Input Low Voltage
I_IH
Input
High Current
OE1
OE0, OE2, MR
V_DD = V_IN = 3.465V
V_DD = V_IN = 3.465V
I_IL
Input
Low Current
OE1
OE0, OE2, MR
V_DD = 3.465V
V_DD = 3.465V
V_OH
Output
High Voltage
QA0:QA2,
QB0:QB2,
REF_OUT
V_{DDO_REF} = 3.3V±5%, I_OH = -12mA
2
-0.3
-150
-5
2.6
V_DD + 0.3
0.8
5
150
V_OL
Output
Low Voltage
QA0:QA2,
QB0:QB2,
REF_OUT
V_{DDO_REF} = 3.3V±5%, I_OL = 12mA
0.5
Units
V
V
µA
µA
µA
µA
V
V
Table 4D. LVDS DC Characteristics, V_DD = V_{DDO_C} = 3.3V±5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
V_OD
∆V_OD
V_OS
∆V_OS
I_Oz
I_OFF
I_OSD
I_OS
Differential Output Voltage
V_OD Magnitude Change
Offset Voltage
V_OS Magnitude Change
High Impedance Leakage
Power Off Leakage
Differential Output Short Circuit Current
Output Short Circuit Current
300
1.325
-10
-20
Typical
450
1.4
-3.5
-3.5
Maximum
575
50
1.575
50
+10
+20
-5
-5
Units
mV
mV
V
mV
µA
µA
mA
mA
Table 5. Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance
Shunt Capacitance
Test Conditions
Minimum
Typical
Fundamental
25
Maximum
50
7
Units
MHz
Ω
pF
ICS8402015AKI REVISION A JUNE 25, 2009
6
©2009 Integrated Device Technology, Inc.