IC43R32400 Datasheet, PDF (9/18 Pages) Integrated Circuit Solution Inc – 1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM

IC43R32400
Absolute Maximum Rating
Symbol
VIN,VOUT
VDD,VDDQ
TA
TSTG
TSOLDER
PD
IOUT
Item
Input,Output Voltage
Power Supply Voltage
Ambient Temperature
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
Rating
-0.3~VDDQ +0.3
-0.3~3.6
0~70
-55~150
260
2.0
50
Unit
V
V
°C
°C
°C
W
mA
Note
Recommended D.C.Operating Conditions (SSTL_2 In/Out, Ta =0~70+/- °C)
Symbol Parameter
Min.
Typ.
VDD
Power Supply Voltage
2.375
2.5
VDDQ
Power Supply Voltage(for I/O )
2.375
2.5
VREF
Input Reference Voltage
0.49x VDDQ
-
VTT
Termination Voltage
VREF - 0.04 VREF
VIH(DC) Input High Voltage
VREF + 0.15 -
VIL(DC) Input Low Voltage
Vssq - 0.3
-
VOH
Output High Voltage
Vtt + 0.76
-
VOL
Output Low Voltage
-
-
IIL
Input Leakage Current
-5
-
IOL
Output Leakage Current
-5
-
Note: Under all conditions VDDQ must bbe less than or equal to VDD.
Max.
Unit
2.625
V
2.625
V
0.51x VDDQ V
VREF + 0.04 V
VDDQ +0.3 V
VDDQ -0.15 V
-
V
VREF- 0.76 V
5
uA
5
uA
Note
IOH = -15.2 mA
IOL = +15.2 mA
Capacitance (VDD =2.5V, f =1MHz,Ta =25+/- °C)
Symbol Parameter
Min.
Max.
Unit
CIN1
Input Capacitance (A0~A11, BA0, BA1)
4
5
pF
CIN2
Input Capacitance(CK, CK#,CKE, CS#,RAS#, CAS #,WE#) 3
5
pF
COUT DQ & DQS input/output capacitance
6
8
pF
CIN3
DM0~DM3 input/output capacitance
6
8
pF
Note: These parameters are periodically sampled and are not 100% tested.
Integrated Circuit Solution Inc.
9
DDR003-0B 11/10/2004