IC43R32400 Datasheet, PDF (10/18 Pages) Integrated Circuit Solution Inc – 1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM

IC43R32400
D.C. Characteristics
(VDD = 2.5V +/ - 5%, TA = 0~70 °C)
Parameter & Test Condition
Symbol
OPERATING CURRENT : One bank; Active-
Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and
DQS inputs changing once per clock cycle; Address
and control inputs changing once every two clock
cycles.
OPERATING CURRENT : One bank; Active-Read-
Precharge; BL=4; CL=4; tRCDRD=4*tCK; tRC=tRC(min);
tCK=tCK(min); lout=0mA; Address and control inputs
changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY
CURRENT: All banks idle; power-down mode; tCK=tCK
(min); CKE=LOW
IDLE STANDLY CURRENT : CKE = HIGH;
CS#=HIGH(DESELECT); All banks idle; tCK=tCK(min);
Address and control inputs changing once per clock
cycle; VIN=VREF for DQ, DQS and DM
IDD0
IDD1
IDD2P
IDD2N
4
5
Max
180
160
260
240
45
40
80
80
Unit
mA
mA
mA
mA
ACTIVE POWER-DOWN STANDBY CURRENT :
one bank active; power-down mode; CKE=LOW;
tCK=tCK(min)
IDD3P
45
40
mA
ACTIVE STANDBY CURRENT : CS#=HIGH;
CKE=HIGH; one bank active ; tRC=tRC(max);tCK=tCK
(min);Address and control inputs changing once per
clock cycle; DQ,DQS,and DM inputs changing twice per
clock cycle
IDD3N
100
100 mA
OPERATING CURRENT BURST READ : BL=2;
READS; Continuous burst; one bank active; Address and
control inputs changing once per clock cycle; tCK=tCK
(min); lout=0mA;50% of data changing on every transfer
IDD4R
440
420 mA
OPERATING CURRENT BURST Write : BL=2;
WRITES; Continuous Burst ;one bank active; address
and control inputs changing once per clock cycle;
IDD4W
300
270
mA
tCK=tCK(min); DQ,DQS,and DM changing twice per clock
cycle; 50% of data changing on every transfer
AUTO REFRESH CURRENT : tRC=tRFC(min);
tCK=tCK(min)
DD5
300
280
mA
SELF REFRESH CURRENT: Sell Refresh Mode ;
CKE<=0.2V;tCK=tCK(min)
IDD6
3
3
mA
BURST OPERATING CURRENT 4 bank
operation: Four bank interleaving READs; BL=4;with
Auto Precharge; tRC=tRC(min); tCK=tCK(min); Address
IDD7
650
550
mA
and control inputschang only during Active, READ , or
WRITE command
Note: ^{1.Stress greater than those listed under " Absolute maximum Ratings" may cause permanent damage}
of the device.
2.All voltages are referenced to Vss.
3.Power-up sequence is described in previous page.
10
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004