IC42S81600 Datasheet, PDF (9/69 Pages) Integrated Circuit Solution Inc – 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
AC ELECTRICAL CHARACTERISTICS
(At VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)
Symbol
tCK3
tCK2
tAC3
tAC2
tCH
tCL
tCKE
tCKH
tAS
tAH
tCMS
tCMH
tDS
tDH
tOH3
tOH2
tLZ
tHZ
tRC
tRAS
tRCD
tRP
tRRD
tT
tRSC
tPDE
tSRX
tDPL
tDAL
tREF
Parameter
-6
Min. Max.
CLK Cycle Time
CL= 3 6
—
CL= 2 7.5
—
CLK to valid output delay⁽¹⁾ CL= 3 —
5.4
CL= 2 —
5.4
CLK high pulse width
2.5
—
CLK low pulse width
2.5
—
CKE setup time
1.5
—
CKE hold time
0.8
—
Address setup time
1.5
—
Address hold time
0.8
—
Command setup time
1.5
—
Command hold time
0.8
—
Data input setup time
1.5
—
Data input hold time
0.8
—
Output data hold time⁽¹⁾
CL= 3 2.7
—
CL= 2 2.7
—
CLK to output in low - Z
0
—
CLK to output in H - Z
2.7
5.4
ROW cycle time
60.0
—
ROW active time
42 100K
RAS to CAS delay
18
—
Row precharge time
15
—
Row active to active delay
12
—
Transition time
1
10
Mode reg. set cycle
12
—
Power down exit setup time
6
—
Self refresh exit time
6
—
Data in to Precharge
12
—
Data in to Active/Refresh Delay Time 27
—
Refresh Time
—
64
-7
Min.
Max.
7.5
—
10
—
—
5.4
—
6
2.5
—
2.5
—
1.5
—
0.8
—
1.5
—
0.8
—
1.5
—
0.8
—
1.5
—
0.8
—
2.7
—
3
—
0
—
2.7
5.4
67.5
—
45
100K
20
—
20
—
15
—
1
10
15
—
7.5
—
7.5
—
15
—
35
—
—
64
-8
Min. Max.
8
—
10
—
—
6
—
6
3
—
3
—
2
—
1
—
2
—
1
—
2
—
1
—
2
—
1
—
3
—
3
—
0
—
3
6
70
—
50 100K
20
—
20
—
20
—
1
10
20
—
10
—
10
—
16
—
36
—
—
64
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Notes:
1. if clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter.
Integrated Circuit Solution Inc.
9
DR023-0E 6/11/2004