IC42S81600 Datasheet, PDF (25/69 Pages) Integrated Circuit Solution Inc – 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
READ to WRITE Command Interval
CLK
Command
DQM
DQ
CAS latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read
Write
Hi-Z
D0
D1
D2
D3
1 cycle
CLK
Command
DQM
DQ
Burst length=8, CAS latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
Read
Write
Q0
Q1
Q2
D0
D1
D2
Hi-Z is
necessary
CLK
Command
DQM
DQ
example: Burst length=4, CAS latency=3
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read
Write
Q2
Hi-Z is
D0
D1
D2
necessary
Integrated Circuit Solution Inc.
25
DR023-0E 6/11/2004