IC-MSA Datasheet, PDF (8/29 Pages) IC-Haus GmbH – SIN/COS SIGNAL CONDITIONER with AGC and 1Vpp DRIVER

iC-MSA SIN/COS SIGNAL
preliminary
CONDITIONER with AGC and 1Vpp DRIVER
Rev A1, Page 8/29
ELECTRICAL CHARACTERISTICS
Operating conditions: VDD = 4.3...5.5 V, Tj = -40...125 °C, IBN calibrated to 200 µA, reference point GNDS, unless otherwise stated.
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
503 fg
Cut-off Frequency
CL = 250 pF
500
kHz
504 Vos
Offset Voltage
±200
µV
505 Isc()
Short-circuit Current
pin shorten to VDD or GND
10
30
50
mA
506 Ilk()
Tristate Leakage Current
tristate or reversed supply
-1
1
µA
Automatic Signal Gain Controller
601 tset()
Automatic Gain Settling Time square control active, AGCGF1: 0x40 → 0x80
2
ms
602 Gt()min Control Range Monitoring 1:
CH1 gain/GR12, AGCGF1 = 0x10
1.2
lower limit
603 Gt()max Control Range Monitoring 2:
CH1 gain/GR12, AGCGF1 = 0xF0
16.6
upper limit
604 Vt()min
Signal Level Monitoring 1:
lower limit
referenced to Vscq()
40
%Vpp
605 Vt()max Signal Level Monitoring 2:
upper limit
referenced to Vscq()
130
%Vpp
Test Current ERR
701 I(ERR) Permissible Test Current
test mode activated
0
1
mA
Bias Current Source and Reference Voltages
801 IBN()
Bias Current Source
MODE(3:0) = 0x01, I(NC) vs. VDDS
180 200 220 µA
802 VPAH
Reference Voltage VPAH
referenced to GND
45
50
55 %VDD
803 V05
Reference Voltage V05
450 500 550 mV
804 V025
Reference Voltage V025
50
%V05
Power-Down-Reset
901 VDDon
Turn-on Threshold
(power-on release)
increasing voltage at VDD vs. GND
3.7
4
4.3
V
902 VDDoff
Turn-off Threshold
(power-down reset)
decreasing voltage at VDD vs. GND
3.2 3.5 3.8
V
903 VDDhys Threshold Hysteresis
VDDhys = VDDon − VDDoff
0.3
V
Clock Oscillator
A01 fclk()
Internal Clock Frequency
MODE(3:0) = 0x0A, fclk(NS)
120 160 200 kHz
Error Signal Input/Output, Pin ERR
B01 Vs()lo
B02 Isc()
Saturation Voltage lo
Short-circuit Current lo
vs. GND, I() = 4 mA
vs. GND; V(ERR) ≤ VDD
V(ERR) > VTMon
0.4
V
4
mA
2
mA
B03 Vt()hi
Input Threshold Voltage hi
vs. GND
2
V
B04 Vt()lo
Input Threshold Voltage lo
vs. GND
0.8
V
B05 Vt()hys Input Hysteresis
Vt()hys = Vt()hi − Vt()lo
300 500
mV
B06 Ipu()
Input Pull-up Current
V() = 0...VDD − 1 V, EPU = 1
-400 -300 -200 µA
B07 Rpu()
Input Pull-Up Resistor
EPU = 0
500
kΩ
B08 Vpu()
Pull-up Voltage
Vpu() = VDD - V(), I() = -5 µA, EPU = 1
0.4
V
B09 VTMon Test Mode Activation Threshold increasing voltage at ERR
VDD + V
1.5
B10 VTMoff Test Mode Disabling Threshold decreasing voltage at ERR
VDD +
V
0.5
B11 VTMhys Test Mode Hysteresis
VTMhys = VTMon − VTMoff
0.15 0.3
V
B12 Ilk()
Leakage Current
tristate or reversed supply voltage
-1
-10 -50
µA
Supply Switch and Reverse Polarity Protection VDDS, GNDS
C01 Vs()
Saturation Voltage
VDDS vs. VDD
Vs(VDDS) = VDD − V(VDDS)
I(VDDS) = -10 mA...0 mA
I(VDDS) = -20 mA...-10 mA
150 mV
250 mV
C02 Vs()
Saturation Voltage
GNDS vs. GND
Vs(GNDS) = V(GNDS) − GND
I(GNDS) = 0 mA...10 mA
I(GNDS) = 10 mA...20 mA
150 mV
250 mV
C03 C()
Backup Capacitor Analog Supply
VDDS vs. GNDS
100
nF