IC-PV Datasheet, PDF (7/28 Pages) IC-Haus GmbH – BATTERY-BUFFERED HALL MULTITURN ENCODER

iC-PV
BATTERY-BUFFERED HALL MULTITURN ENCODER
Rev E2, Page 7/28
ELECTRICAL CHARACTERISTICS
Operating conditions: VDD = 3.0...5.5 V, VBAT < VDD + 1 V, Tj = -40...125 °C, fslow calibrated to 8.5 kHz with IBIAS,
3 mm Ø NdFeB magnet, unless otherwise stated.
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
Total Device
001 V(VDD) Permissible Main Supply Voltage
3.0
5.5
V
002 I(VDD) Supply Current in VDD
Tj = 27 °C, no load
1.0 3.0 5.0 mA
003 V(VBAT) Permissible Battery Voltage
if VDD > Von: VBAT < VDD + 1 V
3.0 3.6 5.5
V
004 Iavg(VBAT) Average Supply Current in VBAT VBAT = 3.6 V, Tj = 27 °C, V(PRE) < 0.5 V
1
< 10 300
µA
005 Ispike() Current Spikes in VDD and VBAT spikes < 5 µs
4.0 10.0 mA
006 Vc()hi
Clamp-Voltage hi at all pins
Vc()hi = V() - VDDS, I() = +1 mA
0.3 0.7 1.6
V
007 Vc()lo
Clamp-Voltage lo at all pins
I() = -1 mA
-1.6 -0.7 -0.3
V
008 tconfig Power up Time After Preset
V(VDD) > 3 V, EEPROM data valid
12
20
ms
009 C(VBAT) External Decoupling Capacitor at ceramic capacitor placed as close as possible 1
µF
Pin VBAT
to the pin
Hall Sensors
101 Hsurf
Operating Magnetic Field
Strength
at chip surface
10
100 kA/m
102 fmag
Magnetic Input Frequency
VDDS = 3.0 V, tested via electrical input
2 000 Hz
103 frot
Permissible Rotation Speed of VDDS = 3.0 V, tested via electrical input
Magnet
120 000 rpm
104 dsens
Diameter of Hall Sensor Circle measured from center of each Hall plate
1.75
mm
105 AArel
Relative Angle Accuracy
referred to position output LSB = 45 °
-25
+25
%
106 hpac
Sensor-to-Package-Surface
Distance
QFN16
0.4
mm
107 hmag
Permissible Sensor-to-Magnet 3 mm diameter diametrical magnet (NdFeB),
Distance
room temperature, see Table 22
4.0 mm
108 TOLrad
Permissible Radial Displacement center of chip vs. center of axis,
see Table 22
1.0 mm
109 TOLtan
Permissible Tangential Displace- chip to magnet coplanarity
ment (Chip Tilt)
5.0
°
Oscillators
301 fslow
Slow Oscillator Frequency
calibrated to 8.5 kHz with IBIAS
8.0 8.5 9.0 kHz
302 ffast
Fast Oscillator Frequency
fslow calibrated with IBIAS
3.5 5.0 6.5 MHz
Supply Switch and Battery Monitoring
401 Von
Switch to VDD Supply (VDD
Power on)
increasing voltage at VDD; VBAT > 3.0 V
2.8 2.9 3.0
V
402 Voff
Switch Back to Battery Supply decreasing voltage at VDD; VBAT > 3.0 V
(VDD Power off)
2.7 2.8 2.95
V
403 Vhys
Hysteresis (VDD Switch)
Vhys = Von - Voff
25 100 150 mV
404 Vth_bat
Battery Monitoring Error Thresh-
old Voltage
2.65 2.75 2.85
V
Digital Outputs: DI_P1, CLK_N1, DO_P0, N0, P2, N2
501 Vs()hi
Saturation Voltage hi
Vs()hi = VDDS - V(), I() = -1.6 mA
0.05
0.4
V
502 Vs()lo
Saturation Voltage lo
I() = 1.6 mA
0.05
0.4
V
503 Isc()hi
Short-Circuit Current hi
VDDS = 3.0 V, V() = GND
-15
-4
mA
504 Isc()lo
Short-Circuit Current lo
VDDS = 3.0 V, V() = VDDS
4
15
mA
EEPROM Interface: SCL, SDA
601 Vt()hi
Threshold Voltage hi
1.7
2
V
602 Vt()lo
Threshold Voltage lo
0.8 1.4
V
603 Vt()hys Hysteresis
Vt()hys = Vt()hi - Vt()lo
75 200 500 mV
604 Vs()lo
Saturation Voltage lo
I() = 1.6 mA
0.05
0.4
V
605 Isc()lo
Short-Circuit Current lo
VDDS = 3.0 V, V() = VDDS
8
30
mA
606 Ipu()
607 fscl
Pull-up Current at SCL and SDA V() = 0 V ... VDDS - 1 V
I²C Frequency at SCL
-950 -300 -30
µA
f_fast /128
kHz