IC-HTP Datasheet, PDF (7/51 Pages) IC-Haus GmbH – DUAL CW P-TYPE LASER DIODE DRIVER

iC-HTP
DUAL CW P-TYPE
LASER
DIODE
DRIVER
preliminary
Rev B1, Page 7/51
ELECTRICAL CHARACTERISTICS
Operating Conditions: VB = 2.8 . . . 11 V (referenced to GND), Tj = -40 . . . 125 °C unless otherwise stated
Item Symbol Parameter
No.
Conditions
Min.
112 Tci
Time to light
NSTBY = hi, ECIE = 0, COMP = 010,
light off to 80 % target value
113 Tcio
Time to target light
Light from 80 % to 99 % target value
114 Idc(LDA) LDAx ACC mode current
EC1, EC2, EMC = hi, EACCx = 1,
V(LDAx) = V(VBLx)-0.7 V . . . 1.5 V, CRNGx = 00
REFx(9:0) = 0x000, RACCx = 0
REFx(9:0) = 0x3FF, RACCx = 0
REFx(9:0) = 0x000, RACCx = 1
REFx(9:0) = 0x3FF, RACCx = 1
-200
-2200
-25
-230
115 TK
Temperature coefficient ACC
mode
-1500
116 IdcLSB
REFx(9:0) step current at LDA in EC1, EC2, EMC = hi, EACCx = 1,
ACC mode
V(LDAx) = V(VBLx)-0.7 V . . . 1.5 V, CRNGx = 00
RACCx = 0;
0.7
RACCx = 1;
0.06
Programmable Resistor
201 Rmdk
Resistor at MDKx pin
RMDx(7:0) = 0xF0 . . . 0xFF, DISPx = 0
RMDx(7:0) = 0x00 . . . 0x0F, DISPx = 0
350
0.154
202 Tk
203 ∆ R
Temperature coefficient
Percental resistor increment
∆R
=
R(n+1)−R(n)
R(n)
-1500
1
Typ.
-130
-1570
-15
-160
-500
1.35
0.15
500
0.220
-500
3.3
Max.
300
4700
-70
-940
-9
-90
2
0.25
650
0.286
0
7
Unit
µs
µs
mA
mA
mA
mA
ppm/K
mA
mA
kΩ
kΩ
ppm/K
%
204 Ileak(MDK) MDKx leakage current
DISPx = 1
D/A Converter
301 R(DAC)
302 ∆ V
303 V(DAC)
D/A converter resolution
Percental voltage increments
D/A converter
∆V
=
V (n+1)−V (n)
V (n)
REFx(9:0) = 0x000 lowest value
REFx(9:0) = 0x3FF highest value
304 DATK
DAC Temperature Accuracy
REFx(9:0) = 0x3FF highest value
Check Output NCHK
401 Vs()lo
Saturation Voltage lo at NCHK I(NCHK) = 1.0 mA
402 Isc()lo
Short Circuit Current lo at NCHK V(NCHK) = 0.4 . . . 3.3 V
403 Ilk()
Leakage Current at NCHK
NCHK = 1;
V(NCHK) = 0 . . . 5.5 V
Series Regulator Output VDD
501 V(VDD) Regulated output voltage
VB = 3.7 . . . 8 V, I(VDD) = -10 . . . 0 mA
NSTBY = hi
502 V(VB,VDD) Voltage Drop between VB and VDD unregulated, I(VDD) = -10 . . . 0 mA
VDD
NSTBY = hi
503 C(VOUT) Capacitor at VDD
Ri(C) < 1 Ω
504 Tvdd
Settling time VDD
NSTBY lo → hi, no load at VDD,
V(VDD) 0 to 90 %
CVDD = 1 µF
Digital inputs
601 Vt()hi
Input Threshold Voltage hi at
NCS/A1, MISO/SDA, MOSI/A0,
SCLK/SCL, NSTBY, EC1, EC2
602 Vt()lo
Input Threshold Voltage lo at VB > 3 V
NCS/A1, MISO/SDA, MOSI/A0, VB = 2.8 V
SCLK/SCL, NSTBY, EC1, EC2
603 Vt()hys
Hysteresis at NCS/A1,
MISO/SDA, MOSI/A0,
SCLK/SCL, NSTBY, EC1, EC2
Vt()hys = Vt()hi - Vt()lo
604 Ipd()
Pull-Down Current at MOSI/A0, V() = 0.4 V . . . VDD
EC1, EC2
-1
1
µA
10
bit
0.05 0.235 1
%
0.09 0.10 0.12
V
1.00 1.10 1.25
V
-2.5
2.5
%
0.4
V
9
33
mA
-10
10
µA
3
3.5
V
100 400 mV
1
3.3
µF
1
ms
2
V
0.7
V
0.6
V
100
mV
1
50
µA