HYMP532S646-E3 Datasheet, PDF (9/23 Pages) Hynix Semiconductor – 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.

1200pin Unbuffered DDR2 SDRAM SO-DIMMs
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on V_DD pin relative to Vss
Voltage on V_DDQ pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
Storage Humidity(without condensation)
Symbol
V_DD
V_DDQ
V_IN, V_OUT
T_STG
H_STG
Value
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-50 ~ +100
5 to 95
Unit
V
V
V
o_C
%
Note
1
1
1
1
1
Notes:
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con
ditions for extended periods may affect reliablility.
OPERATING CONDITIONS
Parameter
DIMM Operating temperature(ambient)
DIMM Barometric Pressure(operating & storage)
DRAM Component Case Temperature Range
Symbol
T_OPR
P^BAR
T_CASE
Rating
0 ~ +55
105 to 69
0 ~+95
Units Notes
o_C
K Pascal 1
o_C
2
Notes:
1. Up to 9850 ft.
2. If the DRAM case temperature is Above 85^oC, the Auto-Refresh command interval has to be reduced to
tREFI=3.9us. For Measurement conditions of T_CASE, please refer to the JEDEC document JESD51-2.
DC OPERATING CONDITIONS (SSTL_1.8)
Parameter
Power Supply Voltage
Input Reference Voltage
EEPROM Supply Voltage
Termination Voltage
Symbol
V_DD
V_DDQ
V_REF
V_DDSPD
V_TT
Min
1.7
1.7
0.49 x V_DDQ
1.7
V_REF-0.04
Notes:
1. V_DDQ must be less than or equal to V_DD.
2. Peak to peak ac noise on V_REF may not exeed +/-2% V_REF(dc)
3. VTT of transmitting device must track VREF of receiving device.
Max
1.9
1.9
0.51 x V_DDQ
3.6
V_REF+0.04
Unit
V
V
V
V
V
Note
1
2
3
Rev. 1.0 / Feb. 2005
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