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| HYMP532S646-E3 Datasheet, PDF (14/23 Pages) Hynix Semiconductor – 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. | |||
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1200pin Unbuffered DDR2 SDRAM SO-DIMMs
IDD SPECIFICATIONS (TCASE : 0 to 95oC)
256MB, 32M x 64 SO- DIMM : HYMP532S64[P]6
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P(F)
IDD3P(S)
IDD3N
IDD4R
IDD4W
IDD5B
IDD6
IDD6(L)
IDD7
E3(DDR2 400@CL 3)
500
540
24
140
160
80
20
260
600
720
660
22
12
1320
C4(DDR2 533@CL 4)
520
560
28
160
180
100
24
300
760
880
700
22
12
1320
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
1
1
512MB, 64M x 64 SO- DIMM : HYMP564S64[P]8
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P(F)
IDD3P(S)
IDD3N
IDD4R
IDD4W
IDD5B
IDD6
IDD6(L)
IDD7
E3(DDR2 400@CL3)
640
720
48
280
320
160
40
440
1040
1200
1320
44
32
1760
C4(DDR2 533@CL 4)
720
800
56
320
360
200
48
520
1280
1440
1400
44
32
1760
Notes:
1. IDD6 current values are guaranted up to Tcase of 85â max.
Rev. 1.0 / Feb. 2005
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
1
1
14
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